Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2008-04-01
2008-04-01
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S640000, C257S751000, C257S774000, C257SE21260, C257SE21277, C257SE21279
Reexamination Certificate
active
10696254
ABSTRACT:
A method of manufacturing a mechanically robust insulating layer, including forming a low-k dielectric layer having a first dielectric constant on a substrate and forming a carbon nitride cap layer on the low-k dielectric layer, the insulating layer thereby having a second dielectric constant that is less than the first dielectric constant.
REFERENCES:
patent: 5485304 (1996-01-01), Kaeriyama
patent: 5708559 (1998-01-01), Brabazon et al.
patent: 5821169 (1998-10-01), Nguyen et al.
patent: 5834845 (1998-11-01), Stolmeijer
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5926236 (1999-07-01), den Boer et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6140691 (2000-10-01), Gardner et al.
patent: 6165891 (2000-12-01), Chooi et al.
patent: 6339217 (2002-01-01), Kley
patent: 6352921 (2002-03-01), Han et al.
patent: 6424044 (2002-07-01), Han et al.
patent: 6429122 (2002-08-01), Chooi et al.
patent: 6436824 (2002-08-01), Chooi et al.
patent: 6455912 (2002-09-01), Kim et al.
patent: 6468927 (2002-10-01), Zhang et al.
patent: 6472306 (2002-10-01), Lee et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6511922 (2003-01-01), Krishnaraj et al.
patent: 6518646 (2003-02-01), Hopper et al.
patent: 2002/0076918 (2002-06-01), Han et al.
patent: 2002/0133258 (2002-09-01), Ngai et al.
patent: 2004/0119163 (2004-06-01), Wong et al.
patent: 2005/0255714 (2005-11-01), Iyer et al.
patent: 2775005 (1999-08-01), None
Erdem Fazli
Haynes & Boone LLP
Pert Evan
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Insulating layer having decreased dielectric constant and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulating layer having decreased dielectric constant and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating layer having decreased dielectric constant and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3934550