Insulating layer having decreased dielectric constant and...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S640000, C257S751000, C257S774000, C257SE21260, C257SE21277, C257SE21279

Reexamination Certificate

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07352053

ABSTRACT:
A method of manufacturing a mechanically robust insulating layer, including forming a low-k dielectric layer having a first dielectric constant on a substrate and forming a carbon nitride cap layer on the low-k dielectric layer, the insulating layer thereby having a second dielectric constant that is less than the first dielectric constant.

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