Insulating gate field effect semiconductor device and method of

Details Insulating gate field effect semiconductor device and method of Insulating gate field effect semiconductor device and method of

1997-05-20

2000-01-25

Williams, Alexander Oscar

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257354, H01L 2701, H01L 2712, H01L 310392

Patent

active

060181826

ABSTRACT:
An insulating gate field effect semiconductor device having a gate insulating film of high resistance to moisture adsorption, wherein trap densities in the gate insulator film and at the interface between a channel semiconductor film and the gate insulator film are lowered, and causing no degradation of device characteristics and no lowering of reliability are caused. A SiO.sub.2 film including fluorine atoms is used as the gate insulator film to compensate defects in the gate insulator film and at the interface between the channel semiconductor film and the gate insulator film.

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