Insulating film and semiconductor device using this film

Details Insulating film and semiconductor device using this film Insulating film and semiconductor device using this film

2011-03-01

2011-03-01

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257SE21639, C257SE21625, C438S216000

Reexamination Certificate

active

07898015

ABSTRACT:
An insulating film includes a first metal, oxygen, fluorine and one of a second metal or nitrogen, and satisfies {k×[X]−[F]}/2≦8.4 atomic %, wherein the fluorine amount [F], the one element amount [X], and a valence number difference k between the first and second metals or between oxygen and nitrogen.

REFERENCES:
patent: 2002/0072180 (2002-06-01), Yugami et al.
patent: 2003/0235064 (2003-12-01), Batra et al.
patent: 2004/0084736 (2004-05-01), Harada
patent: 2005/0029230 (2005-02-01), Fujii
patent: 2005/0274948 (2005-12-01), Tamura et al.
patent: 2002-299614 (2002-10-01), None
U.S. Appl. No. 12/358,466, filed Jan. 23, 2009, Shimizu, et al.

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