Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-09
2009-02-24
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29161
Reexamination Certificate
active
07495298
ABSTRACT:
A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.
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Hayashi Shigenori
Mitsuhashi Riichiro
Dickey Thomas L
Interuniversitair Micro-Elektronica Centrum VZW
McDermott Will & Emery LLP
Panasonic Corporation
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