Insulating barrier, NVM bandgap design

Details Insulating barrier, NVM bandgap design Insulating barrier, NVM bandgap design

2006-04-11

2006-04-11

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S325000

Reexamination Certificate

active

07026686

ABSTRACT:
An insulating barrier extending between a first conductive region and a second conductive region is disclosed. The insulating barrier is provided for tunnelling charge carriers from the first to the second region, the insulating barrier comprising a first portion contacting the first region and a second portion contacting the first portion and extending towards the second region, the first portion being substantially thinner than the second portion, the first portion being constructed in a first dielectric and the second portion being constructed in a second dielectric different from the first dielectric, the first dielectric having a lower dielectric constant than the second dielectric.

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Copy of European Search Report EP 01 20 4106.

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