Insulated type semiconductor devices

Details Insulated type semiconductor devices Insulated type semiconductor devices

1982-06-07

1985-12-03

James, Andrew J.

357 71, 357 67, 357 81, H01L 2314, H01L 2336, H01L 2354

Patent

active

045568995

ABSTRACT:
In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients .alpha..sub.I and .alpha..sub.S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole .alpha..sub.M is adjusted in a range between .alpha..sub.I and .alpha..sub.S.

REFERENCES:
patent: 3248681 (1966-04-01), Reintgen
patent: 3311798 (1967-03-01), Gray
patent: 3597658 (1971-08-01), Rivera
patent: 3829598 (1974-08-01), Darnell
patent: 4025997 (1977-05-01), Gernitis et al.
patent: 4227036 (1980-10-01), Fitzgerald
patent: 4278990 (1981-07-01), Fichot
patent: 4340902 (1982-07-01), Honda et al.

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