Insulated trench semiconductor device with particular layer stru

Details Insulated trench semiconductor device with particular layer stru Insulated trench semiconductor device with particular layer stru

1996-09-25

2000-03-21

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257311, 257139, H01L 2976, H01L 27108, H01L 2974

Patent

active

060405996

ABSTRACT:
It is an object to compatibly realize a decrease in an on-state voltage and an increase in a current capable of turn-off. An N layer (43) having an impurity concentration higher than that of an N.sup.- layer (42) is formed between the N.sup.- layer (42) and a P base layer (44). In the exposed surface of the P base layer (44) connected to an emitter electrode (51), a P.sup.+ layer (91) having an impurity concentration higher than that of the P base layer (44) is formed. The formation of the N layer (43) allows the carrier distribution in the N.sup.- layer (42) to be close to the carrier distribution of a diode, so that the on-state voltage is decreased while maintaining high the current value capable of turn-off. Furthermore, the P.sup.+ layer (91) allows holes to easily go through form the P base layer (44) to the emitter electrode (51), which increases the current value capable of turn-off.

REFERENCES:
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5177572 (1993-01-01), Murakami
patent: 5304821 (1994-04-01), Hagino
patent: 5326993 (1994-07-01), Iwamuro
patent: 5488236 (1996-01-01), Baliga et al.
patent: 5554862 (1996-09-01), Omura et al.
patent: 5751024 (1998-05-01), Takahashi

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