Insulated gate type semiconductor device having built-in protect

Details Insulated gate type semiconductor device having built-in protect Insulated gate type semiconductor device having built-in protect

1995-03-17

1996-10-08

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, H01L 2976, H01L 2994, H01L 3162, H01L 31113

Patent

active

055634354

ABSTRACT:
A semiconductor substrate is partitioned into a main IGBT region and a protection circuit region by a p-type well portion which is formed therebetween in contact with an emitter electrode and which acts as a cut-off region. Both a detection IGBT and protection circuit elements are formed within the protection circuit region. Since excessive carriers flowing from the main IGBT into the protection circuit region can efficiently be extracted through the p-type well portion, a highly reliable and high precision protection circuit built-in insulated gate semiconductor device is realized that can precisely detect any overcurrent, and operate without causing malfunction in the protection circuit and time delay.

REFERENCES:
patent: 5012213 (1991-04-01), Fujihara
patent: 5045902 (1991-09-01), Bancal
patent: 5260590 (1993-11-01), Temple
patent: 5357120 (1994-10-01), Mori
patent: 5489789 (1996-02-01), Nakanishi et al.

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