Insulated gate-type semiconductor device having a low...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S330000, C257S332000, C257S341000, C257S492000, C257S493000, C257SE29257, C438S524000, C438S525000, C438S526000, C438S527000

Reexamination Certificate

active

07999312

ABSTRACT:
A semiconductor 100 has a P−body region and an N−drift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the P−body region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A P−−diffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the P−body region and the P diffusion region, is formed. The P−−diffusion region is depleted prior to the P diffusion region when the gate voltage is off. The P−−diffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.

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