Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S332000, C257S341000, C257S492000, C257S493000, C257SE29257, C438S524000, C438S525000, C438S526000, C438S527000
Reexamination Certificate
active
07999312
ABSTRACT:
A semiconductor 100 has a P−body region and an N−drift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the P−body region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A P−−diffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the P−body region and the P diffusion region, is formed. The P−−diffusion region is depleted prior to the P diffusion region when the gate voltage is off. The P−−diffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.
REFERENCES:
patent: 2004/0195618 (2004-10-01), Saito et al.
patent: 2006/0289928 (2006-12-01), Takaya et al.
patent: 2007/0241394 (2007-10-01), Takaya et al.
patent: 0 893 830 (1999-01-01), None
patent: 1 557 888 (2005-07-01), None
patent: 04-014841 (1992-01-01), None
patent: 05-110072 (1993-04-01), None
patent: 07-273121 (1995-10-01), None
patent: 09-191109 (1997-07-01), None
patent: 2002-511657 (2002-04-01), None
patent: 2005-116822 (2005-04-01), None
patent: 2005116822 (2005-04-01), None
patent: 2005-142243 (2005-06-01), None
patent: 2005327762 (2005-11-01), None
patent: 2005/036650 (2005-04-01), None
Ono, et al.:30V New Fine Trench MOSFET with Ultra Low On-Resistance, 2003 IEEE 15THInternational Symposium on Power Semiconductor Devices and IC's Proceedings, Cambridge, UK, Apr. 14-17, 2003, International Symposium on power semiconductor Devices & IC's, New York, NY: IEEE, US, Apr. 14, 2003, pp. 28-31, XP010653693 ISBN:0-7803-7876-8.
Takaya et al.:Floating Island and Thick Bottom Oxide Trench Gate MOSFET(FITMOS)—A 60V Ultra Low on Resistance Novel MOSFET with Superior Internal Body Diode-; Proceedings of the 17thInternational Symposium on Power Semiconductor Devices & IC's, May 23-26, 2005, Santa Barbara, CA, pp. 43-46, ISPSD2005.
Hamada Kimimori
Miyagi Kyosuke
Takaya Hidefumi
Gupta Raj R
Kenyon & Kenyon LLP
Nguyen Ha Tran T
Toyota Jidosha & Kabushiki Kaisha
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