Insulated gate type semiconductor device having a diffusion...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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Details

C438S202000, C438S270000, C257S329000

Reexamination Certificate

active

07049186

ABSTRACT:
A surface region of a first base layer is formed with a second base layer. Trenches are formed over a range from the surface of the second base layer to the first base layer. The second base layer is divided into base layers. Each of first trenches is formed with a trench gate electrode. An emitter layer is formed in a surface region of the base layer intermittently selected from base layers positioned between first trenches, and contacts with the trench. Dummy trenches are formed over a range from the surface of the base region where the emitter layer is not formed to the first base layer at a position near to each of trenches. A diffusion region is formed in the first base layer to contact with the side portion of dummy trenches formed at the bottom of each trench and a position near thereto.

REFERENCES:
patent: 5448083 (1995-09-01), Kitagawa et al.
patent: 5719409 (1998-02-01), Singh et al.
patent: 2002/0070418 (2002-06-01), Kinzer et al.
patent: 2314206 (1997-12-01), None
patent: 10-163483 (1998-06-01), None
patent: 2002-164542 (2002-06-01), None

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