Insulated gate type semiconductor device and method of manufactu

Details Insulated gate type semiconductor device and method of manufactu Insulated gate type semiconductor device and method of manufactu

1986-08-22

1991-05-14

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307584, 307585, 357 238, 357 42, H01L 27020, H01L 29780, H03K 17687

Patent

active

050160770

ABSTRACT:
An insulated gate type semiconductor device comprising an N channel transistor directly connected to an output terminal of the semiconductor device, the drain region of the N channel transistor comprising a region having a low-impurity concentration contiguous to the channel region, and the source region and a high-impurity concentration, comprising a region having a high-impurity concentration contiguous to the channel region, and an N channel transistor connected between the above mentioned N channel transistor and a low potential, the drain and source regions comprising regions having a high-impurity concentration contiguous to the channel region of the latter-recited N channel transistor.

REFERENCES:
patent: 4290077 (1981-09-01), Ronen
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patent: 4419809 (1983-12-01), Riseman et al.
patent: 4459498 (1984-07-01), Stengl et al.
patent: 4490629 (1984-12-01), Barlow et al.
patent: 4677314 (1987-06-01), Shirato et al.
T. Yamaguchi et al., "Process & Dev. Des OFA 1080 V Mosic", IEDM1981, pp. 255-258.
S. Ogura et al., "Des. & Char. of Itly, Doped D-S (LDD) IGFET", IEEEJ, of S.S. Ckts, vol. SC-15 #4, Aug. 1980, pp. 424-432.
T. Nakamura et al., "Submicron Channel Mosfets . . . , " IEEE Journal of S-S CKTS, vol. SC-13 #5, Oct. 1978, pp. 572-577.

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