Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-14
2006-11-14
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S407000, C257S488000, C257S489000, C257S490000
Reexamination Certificate
active
07135742
ABSTRACT:
An insulated gate type semiconductor device comprised of a semiconductor layer serving as an active region isolated from a semiconductor substrate by a substrate isolation insulating film and a T-shaped gate electrode comprised of a trunk-shaped main gate electrode and a crosspiece-shaped conductor pattern provided on the semiconductor layer, wherein the thickness of the gate insulating film directly under the crosspiece-shaped conductor pattern is made greater than the thickness of the gate insulating film directly under the main gate electrode, whereby it is possible to prevent short-circuits between electrodes, prevent short-circuits between separators, and prevent an increase of the parasitic capacitance.
REFERENCES:
patent: 5095348 (1992-03-01), Houston
patent: 5102809 (1992-04-01), Eklund et al.
patent: 5294823 (1994-03-01), Eklund et al.
patent: 5422505 (1995-06-01), Shirai
patent: 5498882 (1996-03-01), Houston
patent: 5607865 (1997-03-01), Choi et al.
patent: 5610430 (1997-03-01), Yamashita et al.
patent: 5637899 (1997-06-01), Eimori et al.
patent: 5741737 (1998-04-01), Kachelmeier
patent: 5918133 (1999-06-01), Gardner et al.
patent: 5973364 (1999-10-01), Kawanaka
patent: 6100564 (2000-08-01), Bryant et al.
patent: 6154091 (2000-11-01), Pennings et al.
patent: 6252280 (2001-06-01), Hirano
patent: 6307237 (2001-10-01), Erstad
patent: 6403405 (2002-06-01), Kawanaka et al.
patent: 6521948 (2003-02-01), Ebina
patent: 6555446 (2003-04-01), Unnikrishnan
patent: 6620656 (2003-09-01), Min et al.
patent: 2001/0038123 (2001-11-01), Yu
patent: 2005/0001254 (2005-01-01), Hidaka et al.
patent: 60-91676 (1985-05-01), None
patent: 1-293533 (1989-11-01), None
patent: 5-343681 (1993-12-01), None
patent: 8-125187 (1996-05-01), None
patent: 8 125187 (1996-05-01), None
patent: 10-242470 (1998-09-01), None
patent: 11-54759 (1999-02-01), None
patent: 11-274499 (1999-10-01), None
patent: 2000-294794 (2000-10-01), None
patent: 2001-298195 (2001-10-01), None
Akiya Sadanori
Furuya Kazuhiro
Harada Akihiko
Watanabe Hisashi
Flynn Nathan J.
Fujitsu Limited
Sefer Ahmed N.
LandOfFree
Insulated gate type semiconductor device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulated gate type semiconductor device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate type semiconductor device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3655394