Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29262
Reexamination Certificate
active
07910990
ABSTRACT:
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
REFERENCES:
patent: 5396093 (1995-03-01), Lu
patent: 5489790 (1996-02-01), Lage
patent: 5648670 (1997-07-01), Blanchard
patent: 5773851 (1998-06-01), Nakamura et al.
patent: 5877528 (1999-03-01), So
patent: 6051468 (2000-04-01), Hshieh
patent: 6084264 (2000-07-01), Darwish
patent: 6188105 (2001-02-01), Kocon et al.
patent: 6211549 (2001-04-01), Funaki et al.
patent: 6251730 (2001-06-01), Luo
patent: 6437399 (2002-08-01), Huang
patent: 6465843 (2002-10-01), Hirler et al.
patent: 6469345 (2002-10-01), Aoki et al.
patent: 6541817 (2003-04-01), Hurkx et al.
patent: 6541818 (2003-04-01), Pfirsch et al.
patent: 6576953 (2003-06-01), Hirler
patent: 8-23092 (1996-01-01), None
patent: 9-246550 (1997-09-01), None
patent: 2000-277531 (2000-10-01), None
Semiconductor Handbook, 1981, pp. 429-430.
Wolf, S. et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, p. 384.
Inagawa Hiroshi
Machida Nobuo
Oishi Kentaro
Chaudhari Chandra
Hitachi Tobu Semiconductor Ltd.
Miles & Stockbridge P.C.
Renesas Electronics Corporation
LandOfFree
Insulated gate type semiconductor device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulated gate type semiconductor device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate type semiconductor device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2777663