Insulated gate-type semiconductor device and manufacturing...

Details Insulated gate-type semiconductor device and manufacturing... Insulated gate-type semiconductor device and manufacturing...

2004-12-29

2009-12-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S270000, C257SE29260

Reexamination Certificate

active

07629644

ABSTRACT:
An interlayer dielectric film is completely buried in a trench, and failures caused by step coverage is prevented because a source electrode can be formed substantially uniformly on an upper portion of a gate electrode. Also, in the processes of forming a source region, a body region and an interlayer dielectric film, only one mask is necessary so that the device size is reduced to account for placement error of only one mask alignment.

REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 5034785 (1991-07-01), Blanchard
patent: 6518128 (2003-02-01), Hshieh et al.
patent: 6737704 (2004-05-01), Takemori et al.
patent: 2002/0009854 (2002-01-01), Hshieh et al.
patent: 2004/0041207 (2004-03-01), Takano et al.
patent: 2004/0173844 (2004-09-01), Williams et al.
patent: 1436371 (2003-08-01), None
patent: 2662217 (1997-06-01), None
patent: 2001-274396 (2001-10-01), None
patent: 2001-2774396 (2001-10-01), None
patent: 2003-101027 (2003-04-01), None
Chinese Office Action dated Jun. 22, 2007, directed to counterpart CN application No. 2004101037160 (2 pages).

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