Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-10-06
2008-12-30
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257SE27155, C257SE21429, C438S270000, C438S272000
Reexamination Certificate
active
07470953
ABSTRACT:
The invention is intended to present an insulated gate type semiconductor device that can be manufactured easily and its manufacturing method while realizing both higher withstand voltage design and lower on-resistance design. The semiconductor device comprises N+ source region31, N+ drain region11,P− body region41,and N− drift region12.By excavating part of the upper side of the semiconductor device, a gate trench21is formed. The gate trench21incorporates the gate electrode22. A P floating region51is provided beneath the gate trench21.A further trench35differing in depth from the gate trench21may be formed, a P floating region54being provided beneath the trench25.
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Hamada Kimimori
Kuroyanagi Akira
Okura Yasushi
Takaya Hidefumi
Tokura Norihito
Denso Corporation
Kenyon & Kenyon LLP
Quach Tuan N.
Toyota Jidosha & Kabushiki Kaisha
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