Insulated-gate-type field effect transistor which has subgates t

Details Insulated-gate-type field effect transistor which has subgates t Insulated-gate-type field effect transistor which has subgates t

1994-09-29

1995-08-29

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257347, H01L 2976, H01L 2904, H01L 2701

Patent

active

054463041

ABSTRACT:
An active layer of an insulated-gate type field effect transistor is formed by a thin film of an intrinsic polycrystalline semiconductor and a source electrode and a drain electrode are formed on the active layer. A source region and a drain region are not formed in the active layer. A main gate electrode is formed on a gate insulating film of a portion between the source electrode and the drain electrode. Subgate electrodes are formed on the gate insulating film in a portion between the source electrode and the main gate electrode and a portion between the drain electrode and the main gate electrode, respectively.

REFERENCES:
patent: 4319263 (1982-03-01), Rao
patent: 5124769 (1992-06-01), Tanaka et al.
Proceedings of the IEEE, Aug. 1968, "SB-IGFET: An insulated-gate field effect transistor using schottky barrier contacts for source and drain", Lepselter et al., pp. 1400-1402.

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