Insulated-gate type bipolar transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257355, 257378, H01L 2976

Patent

active

055571280

ABSTRACT:
For stabilized overcurrent protection, an insulated-gate type bipolar transistor (IGBT) is provided with an overcurrent limiting feature having reduced dependence of the limited-current value on the power supply voltage. Sensing cells 9 for current detection are formed on part of a semiconductor substrate 5 on which a large number of IGBT main cells 6 are formed integratedly. Emitter electrodes 10 of the sensing cells are connected to an external overcurrent-protection circuit for current detection and overcurrent protection. The sensing cells and the main cells are electrically separated. P-wells 11 for drawing out hole current, connected to the emitter electrodes of the main cells, are formed in a region along the circumference of the sensing cells so that interference between the carriers of the main cells and those of the sensing cells is suppressed and current ratio is stabilized.

REFERENCES:
patent: 4136354 (1979-01-01), Dobkin
patent: 4688065 (1987-08-01), Kinoshita et al.
patent: 4783690 (1988-11-01), Walden et al.
patent: 5045900 (1991-09-01), Tamagawa
patent: 5097302 (1992-03-01), Fujihira et al.
patent: 5303110 (1994-04-01), Kumagai
patent: 5341003 (1994-08-01), Obinata

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