Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1995-09-13
1997-12-16
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 66, 257347, 257616, H01L 31072
Patent
active
056988699
ABSTRACT:
A structure of a semiconductor device and a method of manufacturing the same is provided wherein a leakage current can be reduced while improving a drain breakdown voltage of an Insulated-Gate transistor such as a MOSFET, MOSSIT and a MISFET, and a holding characteristic of a memory cell such as a DRAM using these transistors as switching transistors can be improved, and further a reliability of a gate oxide film in a transfer gate can be improved. More particularly, a narrow band gap semiconductor region such as Si.sub.x Ge.sub.1-x, Si.sub.x Sn.sub.1-x, PbS is formed in an interior of a source region or a drain region in the SOI.IG-device. By selecting location and/or mole fraction of the narrow band gap semiconductor region in a SOI film, or selecting a kind of impurity element to compensate the crystal lattice mismatching due to the narrow-bandgap semiconductor region, the generation of crystal defects can be suppressed. Further the structure that the influences of the crystal defects to the transistor or memory characteristics such as the leakage current can be suppressed, even if the crystal defects are generated, are also proposed.
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Aoki Masami
Arisumi Osamu
Hamamoto Takeshi
Inaba Satoshi
Ishibashi Yutaka
Hardy David B.
Kabushiki Kaisha Toshiba
Thomas Tom
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