Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-13
2007-03-13
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29051, C257S219000, C257S401000
Reexamination Certificate
active
11121319
ABSTRACT:
An insulated gate transistor has a semiconductor thin film having a first main surface and a second main surface, a first gate insulating film formed on the first main surface of the semiconductor thin film, a first conductive gate formed on the first gate insulating film, first and second confronting semiconductor regions of a first conductivity type insulated from the first conductive gate and disposed in contact with the semiconductor thin film, and a third semiconductor region of a second conductivity type opposite to the first conductivity type disposed in contact with the semiconductor thin film. A gate threshold voltage of the first conductive gate is controlled by a forward bias of the third semiconductor region with respect to one of the first and second semiconductor regions.
Hasegawa Hisashi
Hayashi Yutaka
Osanai Jun
Yoshida Yoshifumi
Adams & Wilks
Hayashi Yutaka
Huynh Andy
Seiko Instruments Inc.
Taylor Earl N.
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