Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-18
2009-02-03
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S009000, C257S014000, C257S018000, C257S019000, C257S746000, C257S784000, C257SE51040, C977S742000, C977S762000, C977S938000
Reexamination Certificate
active
07485908
ABSTRACT:
An insulated gate silicon nanowire transistor amplifier structure is provided and includes a substrate formed of dielectric material. A patterned silicon material may be disposed on the substrate and includes at least first, second and third electrodes uniformly spaced on the substrate by first and second trenches. A first nanowire formed in the first trench operates to electrically couple the first and second electrodes. A second nanowire formed in the second trench operates to electrically couple the second and third electrodes. First drain and first source contacts may be respectively disposed on the first and second electrodes and a first gate contact may be disposed to be capacitively coupled to the first nanowire. Similarly, second drain and second source contacts may be respectively disposed on the second and third electrodes and a second gate contact may be disposed to be capacitively coupled to the second nanowire.
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Anwar Abul F
Webster Richard T.
AFMCLO/JAZ
Chiu Tsz K
Klauzinski Robert V.
United States of America as represented by the Secretary of the
Wilczewski M.
LandOfFree
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