Insulated-gate semiconductor field effect transistor which opera

Details Insulated-gate semiconductor field effect transistor which opera Insulated-gate semiconductor field effect transistor which opera

1994-05-19

1996-02-27

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257369, 257391, H01L 2976

Patent

active

054951224

ABSTRACT:
In a low voltage drive circuit section of a semiconductor integrated circuit, the gate oxide films are approximately 250 .ANG., and a low voltage N-channel IGFET and a low voltage P-channel IGFET are operable at high speed and driven at a low voltage. In a high voltage driven circuit section, the gate oxide films are approximately 1500 .ANG., and a high voltage N-channel IGFET and a high voltage P-channel IGFET are designed to have a high breakdown voltage performance. In a low gate voltage/high voltage drive circuit section, the gate oxide films are approximately 250 .ANG., and a high voltage N-channel IGFET is driven at a low gate voltage and operable at high speed. The high voltage N-channel IGFET of the low gate voltage/high voltage drive circuit section has an offset structure including a drain diffusion layer of low concentration, such that the breakdown voltage of the drain is greatly increased.

REFERENCES:
patent: 4471373 (1984-09-01), Shimizu et al.

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