Insulated gate semiconductor device with reduced based-to-source

Details Insulated gate semiconductor device with reduced based-to-source Insulated gate semiconductor device with reduced based-to-source

1991-05-28

1993-06-29

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257341, H01L 2976

Patent

active

052237320

ABSTRACT:
A vertical power MOSFET structure having a source and base region which are not shorted together is provided. The source and base region are formed in a semiconductor substrate using a selectively patterned gate stack which is formed on the substrate as a mask. The drift region is formed of a semiconductor material covering a semiconductor substrate. The semiconductor substrate is of the same conductivity type as the drift region for a MOSFET and is of an opposite conductivity type for an IGBT.

REFERENCES:
patent: 4375717 (1983-03-01), Tonnel
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4598461 (1986-07-01), Love
patent: 4799095 (1989-01-01), Baliga
patent: 4809047 (1989-02-01), Temple
patent: 4816892 (1989-03-01), Temple
patent: 5034790 (1991-07-01), Mukherjee
patent: 5045902 (1991-09-01), Bancal
patent: 5057884 (1991-10-01), Suzuki et al.

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