Insulated gate semiconductor device having trench gate and inver

Details Insulated gate semiconductor device having trench gate and inver Insulated gate semiconductor device having trench gate and inver

1996-09-16

1998-10-27

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257334, H01L 2702, H01L 2974

Patent

active

058281002

ABSTRACT:
An insulated gate semiconductor device has a semiconductor substrate having an irregular surface of raised portions and depressed portions, and a main device region and a protective circuit region. The protective circuit region is formed in a raised portion of the semiconductor substrate and includes a semiconductor device which is driven by an insulated gate electrode formed in a depressed portion of the semiconductor substrate. The raised portions and the depressed portions of the semiconductor substrate are formed by a trench etching method.

REFERENCES:
patent: 4672525 (1987-06-01), Horie et al.
patent: 4942445 (1990-07-01), Baliga et al.
patent: 4961100 (1990-10-01), Baliga et al.
patent: 5233215 (1993-08-01), Baliga
patent: 5574302 (1996-11-01), Wen et al.

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