Insulated gate semiconductor device and method of manufacturing

Details Insulated gate semiconductor device and method of manufacturing Insulated gate semiconductor device and method of manufacturing

1997-08-19

1999-09-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257339, 257345, 257402, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059526998

ABSTRACT:
Impurity regions 110 that can form an energy barrier are artificially and locally disposed in a channel formation region 111. The impurity regions 110 restrain a depletion layer that extends from a drift region 102 toward a channel formation region 111, and prevents a short channel effect caused by the depletion layer, with the result that an insulated gate semiconductor device high in withstand voltage can be manufactured without lowering the operation speed.

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patent: 5801416 (1998-09-01), Choi et al.
patent: 5831294 (1998-11-01), Ugajin

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