Insulated gate semiconductor device and fabrication method there

Details Insulated gate semiconductor device and fabrication method there Insulated gate semiconductor device and fabrication method there

1996-03-29

1998-01-13

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257329, 257331, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057082863

ABSTRACT:
A vertical semiconductor device having an insulated gate structure makes use of a double-gate structure. The double-gate structure dramatically reduces the channel resistance, JFET resistance, and epitaxial resistance of the on-resistance of the power MOSFET, and implements an adequate breakdown voltage due to the effect of gate bias. In principle, a first gate and second gate having mutually facing portions are driven synchronously. This causes first and second channels to be formed in correspondence with first and second gates, and the currents flowing through these first and second channels form the on-current for this power device having a vertical structure.

REFERENCES:
patent: 5378655 (1995-01-01), Hutchings et al.
patent: 5504360 (1996-04-01), Tokura et al.
patent: 5554862 (1996-09-01), Omura et al.

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