Insulated gate semiconductor device

Details Insulated gate semiconductor device Insulated gate semiconductor device

2007-06-29

2010-11-30

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S256000, C257S331000, C257S401000, C257SE29198, C438S197000

Reexamination Certificate

active

07843003

ABSTRACT:
An insulated gate semiconductor device includes a one conductivity type semiconductor layer, a first operation part in a surface of the semiconductor layer and a second operation part in the surface of the semiconductor layer that is smaller in area than the first operation part. A first channel region and a first transistor of an opposite conductivity type are provided in the first operation part and a second channel region and a second transistor of the opposite conductivity type are provided in the second operation part. The first operation part is disposed around the second operation part. Accordingly, design rules for four corner portions can be made uniform and depletion layer spreading in corner portions at a peripheral edge of a channel region of an operation part in application of a reverse voltage is also made approximately uniform. Thus, stable VDSS breakdown voltage characteristics can be obtained.

REFERENCES:
patent: 5341003 (1994-08-01), Obinata
patent: 5629551 (1997-05-01), Nakura et al.
patent: 5994752 (1999-11-01), Sander et al.
patent: 6140680 (2000-10-01), Pulvirenti
patent: 6906399 (2005-06-01), Fruth et al.
patent: 7118951 (2006-10-01), Yedinak et al.
patent: 2002-314086 (2002-10-01), None

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