Insulated-gate semiconductor device

Details Insulated-gate semiconductor device Insulated-gate semiconductor device

2007-09-25

2010-06-08

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257SE29328, C257SE21351, C257SE21361

Reexamination Certificate

active

07732869

ABSTRACT:
Channel regions continuous with transistor cells are disposed also below a gate pad electrode. The channel region below the gate pad electrode is fixed to a source potential. Thus, a predetermined reverse breakdown voltage between a drain and a source is secured without forming a p+ type impurity region below the entire lower surface of the gate pad electrode. Furthermore, a protection diode is formed in polysilicon with a stripe shape below the gate pad electrode.

REFERENCES:
patent: 3712995 (1973-01-01), Steudel
patent: 5012313 (1991-04-01), Fujihira
patent: 5079608 (1992-01-01), Wodarczyk et al.
patent: 5726472 (1998-03-01), Higashida
patent: 5973359 (1999-10-01), Kobayashi et al.
patent: 6211551 (2001-04-01), Suzumura et al.
patent: 6249023 (2001-06-01), Finney
patent: 6548865 (2003-04-01), Fujihira et al.
patent: 6563169 (2003-05-01), Miyakoshi et al.
patent: 6750507 (2004-06-01), Williams et al.
patent: 6965150 (2005-11-01), Higashida et al.
patent: 7026668 (2006-04-01), Hatakeyama et al.
patent: 7045856 (2006-05-01), Hokomoto et al.
patent: 7417295 (2008-08-01), Kushiyama et al.
patent: 7651917 (2010-01-01), Kaneko
patent: 2001/0009287 (2001-07-01), Fujihira et al.
patent: 2002/0050602 (2002-05-01), Narazaki
patent: 2002/0088991 (2002-07-01), Hisamoto
patent: 2002/0179945 (2002-12-01), Sakamoto et al.
patent: 2002/0190285 (2002-12-01), Sakamoto et al.
patent: 2003/0006415 (2003-01-01), Yokogawa et al.
patent: 2003/0057497 (2003-03-01), Higashida et al.
patent: 2004/0206989 (2004-10-01), Aida et al.
patent: 2005/0082611 (2005-04-01), Peake et al.
patent: 2006/0071257 (2006-04-01), Kang
patent: 2006/0131645 (2006-06-01), Kaneko
patent: 2006/0255407 (2006-11-01), Ishida
patent: 2007/0034943 (2007-02-01), Kushiyama et al.
patent: 2007/0262390 (2007-11-01), Ishida et al.
patent: 2008/0061326 (2008-03-01), Yoshida et al.
patent: 2008/0079078 (2008-04-01), Noguchi et al.
patent: 2008/0079079 (2008-04-01), Noguchi et al.
patent: 2008/0142799 (2008-06-01), Kaneko
patent: 2009/0057757 (2009-03-01), Hokomoto et al.
patent: 2009/0078992 (2009-03-01), Kaneko
patent: 2009/0261418 (2009-10-01), Yajima
patent: 2010/0044749 (2010-02-01), Kitamura et al.
patent: 1794451 (2006-06-01), None
patent: 1-280359 (1989-11-01), None
patent: 03071673 (1991-03-01), None
patent: 2002-43574 (2002-02-01), None
patent: 2002-368218 (2002-12-01), None
patent: 2002368218 (2002-12-01), None
Noguchi et al., U.S. Office Action mailed Mar. 6, 2009, directed to U.S. Appl. No. 11/860,206; 11 pages.
Noguchi et al., U.S. Office Action mailed Sep. 10, 2009, directed to U.S. Appl. No. 11/860,206; 16 pages.
Noguchi et al., U.S. Office Action mailed Mar. 19, 2010, directed to U.S. Appl. No. 11/860,206; 15 pages.

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