Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-25
2006-04-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S329000, C257S330000, C257S331000, C257S332000
Reexamination Certificate
active
07034357
ABSTRACT:
An insulated gate semiconductor device includes a first base layer of a first conduction type; a second base layer of a second conduction type formed on a first surface of the first base layer; a source layer of the first conduction type selectively formed in a surface region of the second base layer; a drain layer of the second conduction type formed on a second surface of the first base layer opposite from said first surface; and a gate electrode insulated from the source layer, the first base layer and the second base layer and forming in the second base layer a channel electrically connecting between the source layer and the first base layer, wherein the voltage transiently applied to the device is larger than the static breakdown voltage between the source and the drain when a rated current is turned off under a condition, in which condition the device is connected to an inductance load without using a protective circuit.
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Tomoko Matsudai, et al., “Ultra High Switching Speed 600 V Thin Wafer PT-IGBT Based on New Turn-Off Mechanism”, International Symposium on Power Semiconductor Devices & ICs '02, pp. 285-288.
Tomoko Matsudai, et al., “Advanced 60 μm Thin 600V Punch-Through IGBT Concept for Extremely Low Forward Voltage and Low Turn-off Loss”, Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, Osaka, pp. 441-444.
T. Laska, et al., “The Field Stop IGBT (FS IGBT)—A New Power Device Concept with a Great Improvement Potential”, ISPSD'2000, May 22-25, pp. 355-358.
Matsudai Tomoko
Nakagawa Akio
Fenty Jesse A.
Jackson Jerome
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