Insulated gate field effect transistors

Details Insulated gate field effect transistors Insulated gate field effect transistors

2005-07-18

2010-06-15

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S376000, C257S392000, C257S487000, C257SE29263

Reexamination Certificate

active

07737507

ABSTRACT:
The invention relates to FETs with stripe cells (6). Some of the cells have alternating low and high threshold regions (10, 8) along their length. In a linear operations regime, the low threshold regions conduct preferentially and increase the current density, thereby reducing the risk of thermal runaway. By distributing the low threshold regions (10) along the length of the cells (6), the risk of current crowding is reduced.

REFERENCES:
patent: 6198128 (2001-03-01), Asakura et al.
patent: 6603157 (2003-08-01), Dupuy et al.
patent: 2001/0040480 (2001-11-01), Lee
patent: 2002/0177279 (2002-11-01), Adkisson et al.
patent: 102 46 960 (2004-04-01), None
patent: 0 561 267 (1993-09-01), None

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