Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-08-26
1992-11-24
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257392, H01L 2910, H01L 2978
Patent
active
051667657
ABSTRACT:
A silicon MOSFET is provided, which can be made with an effective channel length of under one micrometer without incurring severe short-channel effects. The MOSFET includes first and second channel regions located between the source and drain regions, the first channel region overlaying the second channel region. The second channel region has a higher carrier density than the first channel region, and functions as a buried ground plane.
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Lee Kwing F.
Ourmazd Abbas
Yan Ran-Hong
AT&T Bell Laboratories
Finston Martin I.
Hille Rolf
Limanek Robert
Pacher Eugen E.
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