Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-23
2010-11-23
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257S345000, C257SE29053
Reexamination Certificate
active
07838930
ABSTRACT:
An insulated-gate field-effect transistor (500, 510, 530,or540) has a hypoabrupt step-change vertical dopant profile below one (104or564) of its source/drain zones for reducing the parasitic capacitance along the pn junction between that source/drain zone and adjoining body material (108or568). In particular, the concentration of semiconductor dopant which defines the conductivity type of the body material largely undergoes a step increase by at least a factor of 10 in moving from that source/drain zone down to an underlying body-material location no more than 10 times deeper below the upper semiconductor surface than that source/drain zone.
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Meetin Ronald J.
National Semiconductor Corporation
Tran Minh-Loan T
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