Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2005-08-30
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S063000, C257S616000
Reexamination Certificate
active
06936875
ABSTRACT:
With the invention, it is possible to avoid deterioration in short-channel characteristics, caused by a silicon germanium layer coming into contact with the channel of a strained SOI transistor. Further, it is possible to fabricate a double-gate type of strained SOI transistor or to implement mixedly mounting the strained SOI transistor and a conventional silicon or SOI transistor on the same wafer. According to the invention, for example, a strained silicon layer is grown on a strain-relaxed silicon germanium layer, and subsequently, portions of the silicon germanium layer are removed, thereby constituting a channel layer in the strained silicon layer.
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Hisamoto et al., “A Folded-channel MOSFET for Deep-sub-tenth Micron Era,” Proceedings of the International Electronic Device Conference (IEDM) , 1988, pp. 1032-1034.
Ohnishi Kazuhiro
Sugii Nobuyuki
Washio Katsuyoshi
Miles & Stockbridge P.C.
Pham Long
Renesas Technology Corp.
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