Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-28
1996-10-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257408, 257412, 257413, 257900, 257382, 257383, 257384, H01L 27088
Patent
active
055699472
ABSTRACT:
For manufacturing an insulated-gate field-effect transistor in a semiconductor device, a refractory metal film is formed on a semiconductor substrate with an insulating film being interposed therebetween. An insulated gate electrode is formed by patterning the refractory metal film and insulating film. After formation of source/drain regions in a surface of the substrate, using the insulated gate electrode as a mask, a poly-silicon film is formed to cover the surface portion of the substrate and the patterned refractory metal film of the gate electrode. The resulting structure is heated to convert at least that portion of the poly-silicon film which lies on the patterned refractory metal film to a silicide film portion. The thus formed silicide film portion is removed so that portions of the doped poly-silicon film are left on the source/drain regions in the surface of semiconductor substrate. These portions of the doped poly-silicon film serve as source/drain electrodes.
REFERENCES:
patent: 4212100 (1980-07-01), Paivinen et al.
patent: 5023679 (1991-06-01), Shibata
patent: 5097301 (1992-03-01), Sanchez
patent: 5276347 (1994-01-01), Wei et al.
Iwasa Shoichi
Naganuma Takeshi
Mintel William
Nippon Steel Corporation
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