Insulated gate field effect transistor having LDD structure and

Details Insulated gate field effect transistor having LDD structure and Insulated gate field effect transistor having LDD structure and

1993-07-14

1994-10-11

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257345, 257400, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

053550110

ABSTRACT:
Insulated Gate Field Effect Transitor (IGFET) having a reduced channel length without deteriorating an electric field relief effect includes a channel stop, located below a channel region, having a peak impurity concentration. A depth of the peak impurity concentration from the substrate surface is deeper than a bottom surface of source and drain regions that provides an Lightly Doped Drain structure.

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