Insulated-gate field-effect transistor and method for producing

Details Insulated-gate field-effect transistor and method for producing Insulated-gate field-effect transistor and method for producing

1997-07-30

1999-05-11

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257346, 257408, H01L29/76;29/94;31/062;31/113

Patent

active

059030291

ABSTRACT:
An insulated-gate field-effect transistor formed in a substrate of a first conductive type or in a well of the first conductive type formed in the substrate is provided. The transistor includes a channel region containing an impurity of the first conductive type; and a source-drain region containing an impurity of a second conductive type. The source-drain region further contains an impurity of the first conductive type; and a concentration of the impurity of the first conductive type contained in the source-drain region is greater than a concentration of the impurity of the first conductive type contained in the channel region but is less than a concentration of the impurity of the second conductive type contained in the source-drain region.

REFERENCES:
patent: 5532508 (1996-07-01), Kaneko et al.
patent: 5536957 (1996-07-01), Okumura
patent: 5675166 (1997-10-01), Iiderem et al.

Affiliated with

Also associated with

Rating

Insulated-gate field-effect transistor and method for producing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated-gate field-effect transistor and method for producing , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated-gate field-effect transistor and method for producing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-247094