Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29158
Reexamination Certificate
active
07977751
ABSTRACT:
Disclosed herein is an insulated gate field effect transistor including: (A) a source/drain region and a channel formation region; (B) a gate electrode formed above the channel formation region; and (C) a gate insulating film; wherein the gate insulating film is composed of a gate insulating film main body portion formed between the gate electrode and the channel formation region, and a gate insulating film extension portion extending from the insulating film main body portion to a middle of a side surface portion of the gate electrode, and when a height of the gate electrode is HGateand a height of the gate insulating film extension portion is HInswith a surface of the channel formation region as a reference, a relationship of HIns<HGateis fulfilled.
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Atsushi Yagishita et al.; High Performance Metal Gate MOSFETs Fabricated by CMP for 0.1um Regime; International Electron Devices Meeting 1998; Technical Digest pp. 785-788 (1988).
Japanese Office Action issued on May 7, 2009 corresponding to JP Application No. 2007-132364.
Nagahama Yoshihiko
Nagaoka Kojiro
Dickey Thomas L.
SNR Denton US LLP
Sony Corporation
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