Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-04
2011-10-04
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S368000
Reexamination Certificate
active
08030708
ABSTRACT:
The invention aims at precisely making an effective junction depth sufficiently small with respect to a substrate surface having a steep PN junction stable in its configuration and having a channel formed therein in relation to an extension portion. Gate electrodes are formed on a P-type well and an N-type well through respective gate insulating films. Two extension portions are formed from two first epitaxial growth layers which contact regions, of the P-type well and the N-type well, where channels are to be formed, respectively, and which are at a distance from each other. Two second epitaxial growth layers are formed on the first epitaxial growth layers in positions which are further at a distance from facing ends of the two extension portions in a direction of being separate from each other. Thus, two source/drain regions are formed on a PMOS side and on an NMOS side each. In the case of this structure, there is adopted no ion implantation for introducing impurities into a deep portion. Hence, the impurities in the extension portions do not thermally diffuse into the substrate side through the activation anneal.
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Skyles Tifney L
SNR Denton US LLP
Sony Corporation
Weiss Howard
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