Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-01-23
1993-11-23
James, Andrew T.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257347, 257348, 257352, 257353, H01L 2978
Patent
active
052647218
ABSTRACT:
An SOI-type insulated-gate FET is formed such that an electrical resistance across a pn-junction of the source region is less than that across a pn-junction of the drain region. This is accomplished by providing the FET with a metal dopant, such as aluminum or tungsten; by excessively doping the source region; by providing an amorphous source region; or by providing a layer formed of a material having a different thermal expansion coefficient from the thermal expansion coefficient of the material forming the source region, upon the source region. In the thus fabricated transistor, there is generated a carrier generation center or a precipitation of the impurities at a pn-junction formed between the source region and the semiconductor substrate. Thus, a current path is formed across the pn-junction of the source region in both the forward and reverse directions of a diode of the pn-junction, so as to substantially eliminate the potential difference between the source region and the semiconductor substrate. Accordingly, a kink phenomenon in the drain voltage-current characteristics is eliminated.
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Dang Hung Xuan
Fujitsu Limited
James Andrew T.
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