Insulated gate drive semiconductor device

Details Insulated gate drive semiconductor device Insulated gate drive semiconductor device

2006-02-28

2006-02-28

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S371000, C257S373000

Reexamination Certificate

active

07005704

ABSTRACT:
An aspect of the present invention provides a semiconductor device includes that a drain region of a first conductivity type formed in a semiconductor substrate, a source region of the first conductivity type, an insulating film in contact with the source region, a gate electrode insulated from the source region by the insulating film, and a base region of a second conductivity type electrically connected to the gate electrode and in contact with the drain region, wherein majority carriers flow between the source region and the drain region before minority carriers are introduced from the base region into the drain region when a predetermined potential is applied to the gate electrode.

REFERENCES:
patent: 5444273 (1995-08-01), Ueno
patent: 10-233503 (1998-09-01), None

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