Insulated gate bipolar transistor with reduced electric fields

Details Insulated gate bipolar transistor with reduced electric fields Insulated gate bipolar transistor with reduced electric fields

1997-03-31

1999-06-29

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257146, 257197, 257212, H01L 2974

Patent

active

059172045

ABSTRACT:
AN IGBT including a collector positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. An emitter positioned on the doped structure in communication with the doped region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define a conduction channel extending laterally adjacent the control terminal and communicating with the drift region and the emitter. The substrate and buried region are the same conductivity and opposite the doped region to form a bipolar transistor therebetween.

REFERENCES:
patent: 5703385 (1997-12-01), Zambrano

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