Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1998-08-06
2000-09-26
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257135, H01L 2974
Patent
active
061246050
ABSTRACT:
An insulated gate bipolar transistor (IGBT) with latch-up protection includes a plurality of base layers of a first conductive type with upper and lower sides, a plurality of base regions of a second conductive type embedded in the upper side of the base layer, a plurality of source regions of the first conductive type embedded in the a plurality of base regions, a gate electrode formed over the base layer, an insulating layer formed between the gate electrode and the base layer, and a main electrode connected to the source region and the base regions. The gate electrode is formed into an elongated curved line with concave and convex parts. Each of the source regions includes a primary source region and plurality of projections. The primary source regions are formed on both sides of the gate electrode such that an intermediate area is formed adjacent to the source regions in each of the base regions and under the gate electrode. Each of the plurality of projections extends from outside of the convex parts of the gate electrode to fill the intermediate region. The first main electrode contacts the source region projections at areas adjacent the convex parts of the gate electrode, and contacts the intermediate region in the base regions at all other points, thereby preventing latch-up.
REFERENCES:
patent: 4356503 (1982-10-01), Shafer et al.
patent: 5099300 (1992-03-01), Baliga
patent: 5757034 (1998-05-01), Ajit
patent: 5796124 (1998-08-01), Nakanishi et al.
patent: 5874751 (1999-02-01), Iwamuro et al.
Meier Stephen D.
Samsung Electronics Co,. Ltd.
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