Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1996-04-24
1998-06-09
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257144, 257622, 257 77, H01L 2974
Patent
active
057639027
ABSTRACT:
An insulated gate bipolar transistor comprises a drain which supports a highly doped p-type substrate layer; a low doped n-type drift layer supported over the substrate layer; a base layer supported over the drift layer including a trench extending into the base layer, and supporting an insulated gate on an upper surface thereof separated from the trench by a highly doped n-type source region, the trench having a highly doped p-type layer at the bottom thereof vertically separated from the source region; and a source layer disposed over the n-type source region and extending into the trench covering the highly doped p-type layer in the trench bottom, wherein an applied voltage to the gate forms a conducting inversion channel in the base layer for electron transport from the source region to the drain, and the highly doped p-type layer in the bottom of the trench collects holes injected from the substrate layer into the drift layer thereby improving latch up immunity for the transistor.
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Baliga et al., Gate Turn-Off Capability of Depletion-Mode Thyristors, IEEE Electron Device Letters, vol. 10, No. 10, Oct. 1989, pp. 464-466.
Nishizawa et al., A Low-Loss High-Speed Switching Device: The 2500-V 300-A Static Induction Thyristor, IEEE Transactions on Electron Devices, vol. ED-33, No. 4, Apr. 1986, pp. 507-515.
Bakowski Mietek
Gustafsson Ulf
Harris Christopher
ABB Research Ltd.
Guay John
Jackson Jerome
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