Insulated gate bipolar transistor having a trench

Details Insulated gate bipolar transistor having a trench Insulated gate bipolar transistor having a trench

1997-01-13

1999-06-01

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257144, 257622, 257 77, H01L 2974

Patent

active

059090391

ABSTRACT:
An IGBT comprises a drain, a highly doped p-type substrate layer, a highly doped n-type buffer layer, a drift layer, a p-type base layer, a highly doped n-type source region layer and a source electrode. A trench is etched in the base layer and an insulating layer with a gate electrode thereon is arranged on the base layer from the source region layer to the drift layer for the creation of a conducting inversion channel there. A contact portion is provided vertically separated from the source region layer and has the source electrode applied thereon for collecting holes injected from the substrate layer to the drift layer at a vertical distance from the source region layer.

REFERENCES:
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patent: 5506421 (1996-04-01), Palmour
Baliga et al., Gate Turn-Off Capability of Depletion-Mode Thyristors, IEEE Electron Device Letters, vol. 10, No. 10, Oct. 1989, pp.464-466.
Nishizawa et al., A Low-Loss High-Speed Switching Device: The 2500-V 300-A Static Induction Thyristor, IEEE Transactions on Electron Devices, vol. ED-33, No. 4, Apr. 1986.

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