Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S122000, C257S133000, C257S138000, C257S139000, C257S146000, C257S147000, C257S263000, C257S328000, C257S329000, C257S330000, C257S331000, C257S341000, C257S370000, C257S392000, C257SE21382, C257SE21383, C257SE27020, C257SE27036, C257SE27054, C257SE27061, C257SE27064, C257SE29027, C257SE29066, C257SE29183, C257SE29197, C257SE29198
Reexamination Certificate
active
07968940
ABSTRACT:
Double gate IGBT having both gates referred to a cathode in which a second gate is for controlling flow of hole current. In on-state, hole current can be largely suppressed. While during switching, hole current is allowed to flow through a second channel. Incorporating a depletion-mode p-channel MOSFET having a pre-formed hole channel that is turned ON when 0V or positive voltages below a specified threshold voltage are applied between second gate and cathode, negative voltages to the gate of p-channel are not used. Providing active control of holes amount that is collected in on-state by lowering base transport factor through increasing doping and width of n well or by reducing injection efficiency through decreasing doping of deep p well. Device includes at least anode, cathode, semiconductor substrate, n− drift region, first & second gates, n+ cathode region; p+ cathode short, deep p well, n well, and pre-formed hole channel.
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patent: 7170106 (2007-01-01), Yamaguchi
Anpec Electronics Corporation
Chen David Z
Hsu Winston
Margo Scott
Warren Matthew E
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