Insulated gate bipolar transistor and method of fabricating the

Details Insulated gate bipolar transistor and method of fabricating the Insulated gate bipolar transistor and method of fabricating the

1989-08-22

1994-06-14

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257133, 257146, 257336, 257341, 257378, H01L 2702, H01L 2974, H01L 2910, H01L 2978

Patent

active

053212959

ABSTRACT:
An insulated gate bipolar transistor comprises an insulation film (7) formed on a channel region (6) and a gate electrode (8) formed on the insulation film (7). The end portion of the gate electrode (8) has recesses so that the gage electrode (8) covers part of the channel region (6) at a predetermined rate. The rate may be made small to increase a channel resistance so that an excessive current at the time of load short-circuiting can be suppressed. In place of the recesses, a step structure may be provided. Further the gate electrode (8) may cover part of the channel region (6) without providing the recesses.

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H. Yilmaz, "Cell Geometry Effect on IGT Latch-Up", IEEE Electron Device Letters, Aug. 1985, pp. 419-421.
A. Nakagawa et al., "Safe Operating Area for 1200 V Nonlatched Bipolar-Mode MOSFETs", IEEE Transactions on Electron Devices, Feb. 1987, pp. 351-354.

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