1989-04-21
1992-02-04
James, Andrew J.
357 239, 357 2314, H01L 2968, H01L 2978, H01L 2906
Patent
active
050863240
ABSTRACT:
The present invention direct to a semiconductor device and a method of manufacturing the same. According to the semiconductor device of the present invention, a first region is partially formed on a major surface of a semiconductor substrate so as to have the opposite conductivity to the first region, and an electrode is formed on the major surface. A barrier layer may be formed between the region adjacent to the first region of the semiconductor substrate and the electrode in order to reduce a current flowing in a parasitic diode. Or, an area of a connecting part between the first region and the electrode may be set to be larger than that of a connecting part between the region adjacent to the first region of the semiconductor substrate and the electrode in order to reduce a current flowing in a parasitic diode. Or, both of technique mentioned above may be combined to reduce a current flowing in a parasitic diode. Thus, it is possible to provide a semiconductor device which can be fit for high-frequency use.
REFERENCES:
patent: 4799095 (1989-01-01), Baliga
patent: 4801986 (1989-01-01), Chang et al.
patent: 4827321 (1989-05-01), Baliga
patent: 4866313 (1989-09-01), Tabata et al.
patent: 4952992 (1990-08-01), Blanchard
James Andrew J.
Jr. Carl Whitehead
Mitsubishi Denki & Kabushiki Kaisha
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