Insulated-gate bipolar transistor

Details Insulated-gate bipolar transistor Insulated-gate bipolar transistor

1994-10-12

1996-06-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, 257173, 257174, 257341, 257355, 257360, H01L 2976

Patent

active

055302777

ABSTRACT:
An insulated-gate bipolar transistor is formed of a number of cells integrally formed on a semiconductor substrate. The cells includes main cells with emitter electrodes, and current detection sensing cells situated adjacent to the main cells. Emitter electrodes are formed in an area of the sensing cells to be separated from the emitter electrodes of the main cells, and an overcurrent protection circuit is connected to the emitter electrodes of the sensing cells. When shorting accident occurs, an overcurrent protecting operation is performed such that an overcurrent is accurately detected through the sensing cells and a main current flowing through the main cells is made smaller than a short-circuit withstanding capacity of the IGBT by gate control of the protection circuit.

REFERENCES:
patent: 4965710 (1990-10-01), Pelly et al.
patent: 5063307 (1991-11-01), Zommer

Affiliated with

Also associated with

Rating

Insulated-gate bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated-gate bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated-gate bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2191076