Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-04-26
2005-04-26
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
With measuring or testing
C438S622000, C438S625000, C438S017000
Reexamination Certificate
active
06884637
ABSTRACT:
An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.
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Fukunaga Hiroyuki
Nakayashiki Hiroyuki
Umemura Eiichi
Huynh Yennhu B
Jr. Carl Whitehead
Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
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