Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-06-12
2007-06-12
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S752000, C257S774000, C438S691000, C438S692000
Reexamination Certificate
active
10711765
ABSTRACT:
The present invention provides inspection methods and structures for facilitating the visualization and/or detection of specific chip structures. Optical or fluorescent labeling techniques are used to “stain” a specific chip structure for easier detection of the structure. Also, a temporary/sacrificial illuminating (e.g., fluorescent) film is added to the semiconductor process to facilitate the detection of a specific chip structure. Further, a specific chip structure is doped with a fluorescent material during the semiconductor process. A method of the present invention comprises: providing a first and a second material; processing the first material to form a portion of a semiconductor structure; and detecting a condition of the second material to determine whether processing of the first material is complete.
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IBM Technical Disclosure Bulletin, vol. 36, No. 09A, Bachi et al., “Laser Process and Tool for Cleaning or Reworking Epoxy on a Slider”, Sep. 1993, pp. 85-86.
Cann Jerome L.
Holmes Steven J.
Huisman Leendert M.
Kagan Cherie R.
Pastel Leah M.
Canale Anthony J.
Hoffman Warnick & D'Alessandro LLC
Lee Hsien-Ming
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